| PART |
Description |
Maker |
| RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| CT40KM-8H05 |
Nch IGBT for Strobe Flasher
|
Renesas Electronics Corporation
|
| SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
| FGR15N40A |
Strobe Flash N-Channel Logic Level IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT25G101SM E001917 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| CY25BAH-8F CY25BAH-8F-T13 |
D-Subminiature Connector; Gender:Female; Number of Contacts:80; Contact Termination:IDC; Body Material:Steel; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:PC Board; Peak Reflow Compatible (260 C):No
NCH IGBT FOR STROBE FLASHER
Transistors>IGBT>for Stlobe use
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| FGW15N40A |
Strobe Flash N-Channel Logic Level IGBT
From old datasheet system
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
